• High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
  • High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
  • High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
  • High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
  • High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
  • High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance
High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance

High Power 650V Silicon Carbide Schottky Diode SC0265 SIC 2A for Durable Performance

Product Details:

Place of Origin: China
Certification: ISO9001:2015, ISO14001:2015, IATF16949

Payment & Shipping Terms:

Minimum Order Quantity: 3,000 Pieces
Price: Negotiable
Delivery Time: Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Payment Terms: LC, T/T, PayPal
Supply Ability: 10000000000piece/Year
Get Best Price Contact Now

Detail Information

Model NO.: SC0265 Luminous Intensity: None Luminance
Color: None Luminance Structure: Planar
Material: Silicon Transport Package: Tube
Specification: High Power Trademark: JF, JH
Origin: China HS Code: 85411000
Supply Ability: 10000000000piece/Year Package Size: 20.00cm * 40.00cm * 15.00cm
Package Gross Weight: 8.000kg

Product Description

Product Description

SILICON CARBIDE SCHOTTKY DIODE
Electronics Component

Part Number:  SC0265/SC0465/SC0665/SC0865/SC1065/SC1265/SC1565/SC1665/SC2065

Major Parameter: SIC DIODE

Type VRRM IF IR(25ºC) IR(175ºC) VF(25ºC) VF(175ºC) Tj Outline
V A μA μA V V ºC
SC0265 650 2 5 50 1.65  2.3 175 TO-220AC
SC0465 650 4 5 50 1.65  2.3 175
SC0665 650 6 5 50 1.65  2.3 175
SC0865 650 8 5 50 1.65  2.3 175
SC1065 650 10 5 50 1.65  2.3 175
SC1265 650 12 5 50 1.65  2.3 175
SC1565 650 15 5 50 1.65  2.3 175
SC1665 650 16 5 50 1.65  2.3 175
SC2065 650 20 5 50 1.65  2.3 175

Brand: JF logo

Package: TO-220AC
Manufacturer: Jinan Jingheng Electronics Co., Ltd.
Description:

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size /cost. Its high reliability ensures robust operation during surge or over-voltage conditions.
Features:
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Typical applications:
General Purpose
SMPS, Solar inverter, UPS
Power Switching Circuits
SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODESC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE

SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE
Company Profile

SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE
SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE
SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE

SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODESC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODESC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE

SC0265 SIC 2A/650V SILICON CARBIDE SCHOTTKY DIODE
 

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